Stress-Development Process during Ni-Silicide Film Formation.

Characterization and Modeling of Stress Evolution during Nickel Silicides Formation

An curvature measurement technique was used to characterize the stress evolution during reaction of a Ni film and a silicon substrate to form nickel silicide. Stress changes were measured at each stage of the silicide growth. When the nickel films were subjected to longtime isothermal annealing, stresses that developed during silicide formation gradually relaxed. Fitting the experimental result...

Formation of Heat Resistant Ni Silicide Using Metal Additive for Nanoscale CMOS

Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires

Ni-silicide/Si nanowires were fabricated by atomic force microscope nano-oxidation on silicon-on-insulator substrates, selective wet etching, and reactive deposition epitaxy. Ni-silicide nanocrystal-modified Si nanowire and Ni-silicide/Si heterostructure multi-stacked nanowire were formed by low- and high-coverage depositions of Ni, respectively. The Ni-silicide/Si Schottky junction and Ni-sili...

Optimizing the Formation of Nickel Silicide

A review of the formation processes for nickel silicide is given to assess the limitations of using the silicide for sub-65 nanometer technologies. Various aspects attributed to the NiSi formation process are described and addressed by using a two-step process sequence for annealing. The focus of this study was to develop a process sequence with three principal steps to achieve low resistivity ...

Thick Film Ni-Ferrite Inductors